A Comparative Analysis of VS-CNTFET and CMOS Based Inverter Circuit

Abstract

This abstract delves into the comparative exploration between Carbon Nanotube Field Effect Transistors (CNTFETs) and traditional CMOS (Complementary Metal-Oxide-Semiconductor) transistors, with a specific emphasis on digital inverter circuits. Utilizing carbon nanotubes derived from the graphene allotrope, CNTFETs are introduced as a technological advancement, providing advantages such as reduced size and lower power consumption. The investigation centres on the evaluation of the Stanford model, particularly focusing on the Virtual Source Carbon Nanotube Field Effect Transistor. This specific model showcases superior performance, compact dimensions, and decreased power requirements when contrasted with silicon-based MOSFETs. The analytical process involves subjecting virtual source CNTFET inverter circuits and MOSFET-based circuits to testing via the Symica software tool, encompassing the examination of transient response, voltage transfer characteristics, and steady-state power consumption. The outcomes underscore the potential of CNTFETs as promising alternatives in the progression of digital design, offering heightened efficiency and diminished power consumption.