Preparation and Characterisation of Electrodeposited Cu (In, Ga) Se 2 Thin Film Solar Cells

Authors:

S.R.Kumar (National Institute of Foundry & Forge Technology, Ranchi)

B. Prajapati (Gossner College, Ranchi)

Keywords: Electrodeposition, Absorption coefficient, Band gap, Interface, Resistivity.

Abstract:

The copper indium gallium selenide (CIGS) thin film solar cell can be prepared by electrodeposition, chemical bath deposition and annealing technique. The as deposited films are crystalline in nature. The crystallinity increases further by annealing the thin film. The XRD analysis indicate the prominent peak of Cu(In, Ga) Se 2 (112) at 28.27 0 . The resistivity of CIGS thin film is found to be 0.8915 ohm-cm. The solid state properties of window materials CdS are carried out by XRD, XPS & SEM. The as deposited films are stoichiometric in nature with Cd/S ratio equal to 1.1:1. The grains are spherical, well connected and no effect of charge are observed. The XRD spectra of CIGS solar cell show the prominent peak of CdS (002) and CIGS (112). Some minor peaks are observed due to Ga 2 0 3 , CuSeO 4 and GaCl 3 . The performance of the CIGS solar cell are carried out and it is observed that the open circuit voltage, short circuit current density, fill factor and efficiency of CIGS solar cell are found to be 550 mV, 13mA/cm 2 , 0.45 and 13% respectively.