Energetic Ion Irradiation and Annealing Effect on Ti/Co System

Authors:

Nisha Bansal (Manav Rachna International Institute of Research and Studies, Faridabad)

Sadhna Shrivastava (Dyal Singh College, Delhi University, New Delhi)

Keywords: SHI, RBS, GIXRD.

Abstract:

Energetic ion beams of different elements with high energy of the order of few MeV to GeV are used for the change in material properties, characterization and synthesis of alloys. In the present work the effect of high energy ion irradiation on Ti/Co bilayer system is studied. Specimens were prepared by depositing Ti and Co layers on silicon substrate by sequential electron-beam evaporation technique in the high vacuum deposition system at room temperature. For irradiation of the samples, Au ions (120 MeV), Ag ions (100 MeV) and Ni ions (80 MeV) were used. Depth profile and composition of the pristine and irradiated samples was studied by Rutherford Backscattering Spectroscopy (RBS). Grazing Incidence X-ray Diffraction (GIXRD) patterns were obtained to determine the phase formation. Absence of interface mixing upon irradiation in Ti/Co samples has been discussed. Pristine and irradiated samples were annealed at 4000C for one hour to study its effect.

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