Design and Analysis of Three Stages pHEMT - LNA at K-Band

Issue: Vol.4 No.1

Authors:

Swati Sharma

Ashok Mittal (Ambedkar Institute of Advanced Communication Technologies and Research, Geeta Colony)

Mrs. Meena Mishra (Solid State Physical Laboratory (DRDO))

S.K. Tomar (Solid State Physical Laboratory (DRDO))

Keywords: LNA, pHEMT technology.

Abstract: 

This paper represents the design of three stage LNA using EC2612 pHEMT technology. pHEMT technology gives high transconductance and shows better reliability. This three stage amplifier has been designed for K-band applications. The GaAlAs LNA is suitable for trans-receiver front end due to the low input output VSWR, high stability and redundancy. The LNA is designed at 21GHz using distributed parameters and over RT duroid (ε r = 2.2). This structure is simulated and fabricated using ADS software. The simulated result shows the minimum noise figure of 1.09dB and a maximum gain of 25dB. Here tuning is done for gain flatness and +_ 0.5dB gain flatness is achieved for the range of 20-22GHz. Hence, the simulated and fabricated results are in good agreement.

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References:

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